|
|
Mathematics Model and Numerical Analysis of the MOCVD Reactor |
CHEN Yan, WANG Zhen-tao, LUO Ti-qian |
School of Energy Resource and Power Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013, China |
|
|
Abstract The mathematics model of Metal organic chemical vapor deposition (MOCVD) reactor with system of GaN deposition in a vertical reactor is introduced. The model includes the fluid flow, heat and mass transfer equations. The problem is solved numerically by unstructured grid, using the upwind finite volume method for the three conservation equations. The distributions of velocity, temperature in the reactor are predicted. The numerical results presented can also be used to predict thermal conductivity and diffusion and momentum transport phenomena in axisymmetric vertical reactor. It provides the theoretic basis for optimization of MOCVD reactor.
|
Received: 08 August 2013
|
|
|
|
[1] Chang-Yong Shin,et al.Numerical Analysis for the Growth of GaN Layer in MOCVD Reactor[J].Journal of Crystal Growth,2003:301-312[2] Won Young Chung,et al.Modelling of Cu thin film growth by MOCVD process in a vertical reactor[J].Journal of Crystal Growth,1997:691-697[3] Durst F,et al.A Multigrid Solver for Fluid Flow and Mass Transfer Coupled with Grey body Surface Radiation for the Numerical Simulation of Chemical Vapor Deposition Processes[J].Journal of Crystal Growth,1995,146:202-208 |
|
|
|