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| Effect of etching conditions on anisotropic etch rates of quartz and KMC simulation |
| 1. 28th Research Institute of China Electronics Technology Group Corporation, Nanjing, Jiangsu 210007, China; 2. School of Mechanical Engineering, Southeast University, Nanjing, Jiangsu 211189, China |
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Abstract The complex anisotropic etching characteristics of the anisotropic wet etching for quartz make it difficult to predict and control the evolution process and the etching results. By etching hemispherical method, the effects of concentration and temperature of solution on anisotropic etch rates of quartz were investigated. Based on the activation energy, the cause of anisotropic etching characteristics was analyzed in detail. In morphology prediction, according to the particular atomic arrangements and the facet specific etch rates of several crystal planes parallel to the electric x and mechanical y axes, the KMC etching process model was established based on a suitable quartz-based removal probability function (QUARTZ-RPF). The prediction of the etch rates at wide range of crystallographic facets is successfully realized, and the three-dimensional microstructures and topography etched on Z-cut substrate with arbitrary mask patterns are accurately simulated.
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Received: 23 November 2018
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2020, Vol. 41 
