Abstract：The mathematics model of Metal organic chemical vapor deposition (MOCVD) reactor with system of GaN deposition in a vertical reactor is introduced. The model includes the fluid flow, heat and mass transfer equations. The problem is solved numerically by unstructured grid, using the upwind finite volume method for the three conservation equations. The distributions of velocity, temperature in the reactor are predicted. The numerical results presented can also be used to predict thermal conductivity and diffusion and momentum transport phenomena in axisymmetric vertical reactor. It provides the theoretic basis for optimization of MOCVD reactor.
陈燕；王贞涛；罗惕乾. MOCVD反应器的数学模型及其数值模拟[J]. 排灌机械工程学报, 2004, 22(4): 39-41.
CHEN Yan, WANG Zhen-tao, LUO Ti-qian. Mathematics Model and Numerical Analysis of the MOCVD Reactor. Journal of Drainage and Irrigation Machinery Engin, 2004, 22(4): 39-41.
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